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Silicon Carbide Design Center

Standard Packaging for SiC Modules

Overview

Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.

Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high performance all SiC modules or with high frequency silicon IGBTs into hybrid Si / SiC modules. The new low profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications.

Package Configuration

Product Package Dimensions

Split Dual Hybrid Si/SiC
QID1210005, Split Dual IGBT, 1200V, 100A
QID1210006, Split Dual IGBT, 1200V, 100A


All SiC
PDS025J170H5, Discrete Single SiC Shottky Barrier Diode, 1700V, 25A
PDS050J065H3, Discrete Single SiC Schottky Barrier Diode, 650V, 50A
PDS060J120H3, Discrete Single SiC Schottky Barrier Diode, 1200V, 60A
PLS100J065A, Discrete Single SiC Schottky Barrier Diode, 650V, 100A
PLS100J120A, Discrete Single SiC Schottky Barrier Diode, 1200V, 100A
PMS0400065M, Discrete Single SiC MOSFET, 650V, 49A
PRXS02FB12HDB1, 3 Phase SiC MOSFET Module, 1200V, 800A
PRXS02FB12HDB1L, 3 Phase SiC MOSFET Module, 1200V, 800A
PRXS17SU12Z7C1, Single SiC MOSFET Module, 1200V, 105A
PRXS300HF12DFQ1, Dual SiC MOSFET Module, 1200V, 300A
PRXS300HF17DFC1, Yes, 1700V, 300A
PRXS300HF17I3C2, Dual SiC MOSFET Module, 1700V, 300A
PRXS360HF12DFC1, Yes, 1200V, 360A
PRXS400HF12DFQ1, Dual SiC MOSFET Module, 1200V, 400A
PRXS400HF17DFC1, 106.4mm x 61.4mm, 1700V, 400A
PRXS400HF17I3C2, Dual SiC MOSFET Module, 1700V, 400A
PRXS540HFDFC1, Dual SiC MOSFET, 1200V, 540A
PRXS600HF12I3C2, Dual SiC MOSFET Module, 1200V, 600A
PRXS600HF12I4C1, Dual SiC MOSFET Module, 1200V, 600A
PRXS600HF12I5B3 , Dual SiC MOSFET Module, 1200V, 600A
PRXS600HF17I3C2, Dual SiC MOSFET Module, 1700V, 600A
PRXS600HF22I4T1, Dual SiC MOSFET Module, 2200V, 600A
PRXS800HF12I5B3, Dual SiC MOSFET Module, 1200V, 800A
PRXS800HF17I4C1, Dual SiC MOSFET Module, 1700V, 800A
PRXS900HF12I4C1, Dual SiC MOSFET, 1200V, 900A
QJD1210SB2, Split Dual MOSFET, 1200V, 100A
QJD1212SA2, Dual SiC MOSFET, 1200V, 120A
QJD1242SA1, Dual SiC MOSFET, 1200V, 420A
QJD1260SA1, Dual SiC MOSFET, 1200V, 600A
QJD1720SA1, Dual SiC MOSFET, 1700V, 200A
QJD1760SB1, Dual MOSFET, 1700V, 540A
QJE1710SA1, Six-Pack (Three Phase) SiC MOSFET Module, 1700V, 100A
QJSB006SB1, Single SiC MOSFET, 10000V, 54A
QJSB021SB1, Single SiC MOSFET, 10000V, 216A
QRC1213SA1, Common Cathode SiC Shottky Diode, 1200V, 130A
QRC1226SA1, Common Cathode SiC Schottky Diode, 1200V, 260A
QRC1240SA1, Common Cathode SiC Schottky Diode, 1200V, 400A
QRC1715SA1, Common Cathode SiC Schottky Diode, 1700V, 150A
QRC3310SA1, Common Cathode SiC Schottky Diode, 3300V, 100A
QRD1213SA1, Dual SiC Schottky Diode, 1200V, 130A
QRD1226SA1, Dual SiC Schottky Diode, 1200V, 260A
QRD1240SA1, Dual SiC Schottky Diode, 1200V, 400A
QRD1723SA1, Dual SiC Schottky Diode, 1700V, 230A
QRF1226SA1, Common Anode SiC Schottky Diode, 1200V, 260A
QRF1240SA1, Common Anode SiC Schottky Diode, 1200V, 400A
QRF1715SA1, Common Anode SiC Schottky Diode, 1700V, 150A
QRF3310SA1, Common Anode SiC Schottky Diode, 3300V, 100A
QRJ1240SA1, Dual - Special, 1200V, 400A
QRJ1715SA1, Yes, 1700V, 150A
QRS3310SA1, Single SiC Schottky Diode, 3300V, 100A
QRS3310SA2, Single SiC Schottky Diode, 3300V, 100A


For more information:
email: globalsales@pwrx.com
phone: 724-925-7272, Option 3 (Applications Engineering Assistance)

Applications

  • PV Inverters
  • UPS
  • High speed motor drives
  • Induction heating
  • Welding
  • Military & Aerospace power converters
  • Medical imaging amplifiers
  • Electric vehicle
  • Boost converters

Product Advantages

  • Significant reduction in switching losses
  • Increased system efficiency
  • High temperature operation
  • Higher operating frequency
  • Reduced cooling requirements
  • Zero reverse recovery current from diode
  • Low parasitic inductance
  • Reduced system size / high power density

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