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    Silicon Carbide Design Center

    Parametric Search Technical Center
    OVERVIEW
    FEATURES
    ADVANTAGES
    Advantages of Reduction in Module Power Loss
    Standard Packaging for SiC Modules
    APPLICATIONS
    Type
    Full SiC ModulesHybrid Si/SiC ModulesGate Driver for Full SiC Module
    Voltage
    650V1200V1700V2200V3300V10000V
    Current
    0-100A101-600A601-1200A
    Circuit Configuration
    3 Phase BridgeCommon AnodeCommon CathodeSingleDual6-PACSplit DualHalf Bridge
    Technical Documents
    SiC New Products
    Eurosatory 2022
    Designing a Custom Module

    Full SiC & Hybrid SiC IGBTs Line Up

    Features

    QID1210005, QID1210006

    • Low ESW(off)
    • Aluminum Nitride Isolation
    • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
    • Low Internal Inductance
    • 2 Individual Switches per Module
    • Isolated Baseplate for Easy Heat Sinking
    • Automated Assembly Assures High Reliability
    • NFH Silicon IGBTs

    QJD1210010, QJD1210011

    • Junction Temperature: 175°C
    • Silicon Carbide Chips
    • Low Internal Inductance
    • Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode
    • High Speed Switching
    • Low Switching Losses
    • Low Capacitance
    • High Power Density
    • Isolated Baseplate
    • Aluminum Nitride Isolation
    • 2 Individual Switches per Module
    For more information:
    email: globalsales@pwrx.com
    phone: 724-925-7272, Option 3 (Applications Engineering Assistance)
    Manufactured in our ISO 9001 certified manufacturing centers: ISO 9001:2015 and AS9100D

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