Product Advantages
  • Significant reduction in switching losses
  • Increased system efficiency
  • High temperature operation
  • Higher operating frequency
  • Reduced cooling requirements
  • Zero reverse recovery current from diode
  • Low parasitic inductance
  • Reduced system size/ high power density

Full SiC & Hybrid SiC IGBTs
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Overview

Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.

Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high performance full SiC modules or with high frequency silicon IGBTs into hybrid Si/SiC modules. The new low profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling application.

SiC hybrid modules offer ~45% reduction in power loss vs. Si counterparts due to lower turn-on losses, lower Vf, and effective reduction of diode reverse recovery losses to zero.

Full SiC modules offer ~70% reduction in power loss vs. Si counterparts due to switching efficiency of MOSFET technology as well as reduced diode losses. Further, use of full SiC modules results in ~60% module size reduction vs. traditional Si.


Full SiC vs. Si Loss Comparison

For more information:
email: globalsales@pwrx.com
phone: 724-925-7272, Option 3 (Applications Engineering Assistance)
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